Semiconductor material etching ion source multiple charged beam having ionization reactor with extractor wall/ionization input and input/output poles with enclosing flux magnetic field.

摘要

The multiple charged ion source (100) has an ionization reactor with end walls (P1,P2) on the input wall and one an extraction wall, coupled to a gas ionizer input (300) with an ionization wave guide (106). The source has an electromagnet with two pole pieces (101,102) which are input and output poles. There are driving coils (B1,B2). A central bored out section (105) holds the extractor ions (107) and ion extraction electrodes (109). The pole pieces have a magnetic flux enclosure (110). The magnetic field formed in the reactor central part is lower or constant.