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Method of forming high quality multi-thickness oxide layer by reducing defects generated by Descum process
Method of forming high quality multi-thickness oxide layer by reducing defects generated by Descum process
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机译:通过减少脱胶工艺产生的缺陷形成高质量的多厚度氧化层的方法
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摘要
A method for forming high quality oxide layers having different thicknesses by eliminating descum induced defects is disclosed. A semiconductor substrate is subjected to reactive ion etching. The semiconductor substrate includes a wafer, an oxide layer on the wafer, a developed photoresist mask on the oxide layer. The oxide layer is then etched, and the remaining photoresist is stripped before another layer of oxide is grown on the substrate.
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