首页> 外国专利> METHOD FOR FEEDING RAW MATERIAL LIQUID INTO RAW MATERIAL VESSEL USED FOR ORGANOMETALLIC CHEMICAL VAPOR DEPOSITION METHOD AND RAW MATERIAL VESSEL FED WITH THE RAW MATERIAL LIQUID

METHOD FOR FEEDING RAW MATERIAL LIQUID INTO RAW MATERIAL VESSEL USED FOR ORGANOMETALLIC CHEMICAL VAPOR DEPOSITION METHOD AND RAW MATERIAL VESSEL FED WITH THE RAW MATERIAL LIQUID

机译:将原料液体喂入用于有机化学气相沉积法的原料容器中的方法以及用原料液体喂养的原料容器

摘要

PROBLEM TO BE SOLVED: To provide a method for feeding a raw material liquid into a raw material vessel by which the flow rate of the raw material liquid in an MOCVD (organometallic chemical vapor deposition) system can be controlled, and to provide the raw material vessel fed with the raw material liquid.;SOLUTION: The improved method for feeding the raw material liquid into the raw material vessel used for the MOCVD method includes a stage where the inside of the raw material vessel is purged with an inert gas; a stage where the raw material liquid such as a raw material solution prepared, e.g. by dissolving an Ru(EtCp)2 complex, Ti(iPrO)2(thd)2 into an organic solvent is poured into the purged raw material vessel in the ratio of 30 to 99 vol.% of the volume of the raw material vessel; and a stage where an inert gas is fed into the raw material vessel poured with the raw material liquid. The characteristic constitution thereof is that the inert gas is filled into the raw material vessel in the pressure range of 105 to 400 kPa.;COPYRIGHT: (C)2004,JPO
机译:解决的问题:提供一种用于将原料液体供给到原料容器中的方法,通过该方法可以控制MOCVD(有机金属化学气相沉积)系统中的原料液体的流速,并提供原料解决方案:用于将原料液体进料到用于MOCVD方法的原料容器中的改进方法包括以下步骤:用惰性气体吹扫原料容器的内部;制备例如原料溶液等原料液体的阶段。通过将Ru(EtCp) 2 配合物溶解,将Ti(iPrO) 2 (thd) 2 溶解到有机溶剂中,然后倒入清洗后的原料中。物料容器的体积为原料容器体积的30至99%(体积);在该阶段中,向注入了原料液的原料容器内供给惰性气体。其特征在于将惰性气体以105至<400 kPa的压力范围填充到原料容器中。版权所有:(C)2004,JPO

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