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Pass band width adjustment manner null of bandpass filter and bandpass

机译:带通滤波器和带通的通过带宽调整方式无效

摘要

PROBLEM TO BE SOLVED: To reduce deterioration of narrow band-pass characteristics at a low cost and to facilitate adjustment by forming a high-temperature superconductor film on a surface facing the internal wall surface of a metal housing, where a dielectric substrate having a microstrip line resonator is installed. ;SOLUTION: This dielectric substrate 2, where microstrip resonators each composed of a ground conductor 3 and a strip conductor 4 of the high-temperature superconductor film are formed, is arranged in a normal conductor metal housing 1 so that the ground conductor surface 3 is grounded to the internal wall of the metal housing 1. A housing upper lid is grounded to the bottom surface of the dielectric substrate 5 in terms of high frequency, by electrically connecting the high-temperature conductor film 6 to the metal housing 1 at its periphery. Thus, the top surface internal wall of the housing 1 facing a ground conductor part is covered with the high conductor film 6, so that a region of the internal wall of the housing 1 where the normal conductor occupies is only sidewall; and then deterioration of narrow band-pass characteristics is reduced, and height of the side wall of the housing is varied, to vary the coupling coefficient between the resonators, thereby facilitating the adjustment the passing band width.;COPYRIGHT: (C)2001,JPO
机译:解决的问题:以低成本降低窄带通特性的劣化,并且通过在面对金属外壳的内壁表面的表面上形成高温超导体膜来方便调节,在该表面上具有微带的电介质基板已安装线路谐振器。 ;解决方案:该电介质基片2布置在普通导体金属外壳1中,从而形成微导体,每个微带谐振器分别由高温超导体膜的接地导体3和带状导体4组成。通过将高温导体膜6在金属壳体1的周围电连接到金属壳体1,壳体上盖以高频的方式接地到电介质基板5的底面。 。因此,壳体1的面对接地导体部分的顶表面内壁被高导体膜6覆盖,使得壳体1的内壁中的普通导体所占据的区域仅是侧壁;因此,壳体1的内表面仅是侧壁。从而减小了窄带通特性的恶化,并改变了壳体侧壁的高度,从而改变了谐振器之间的耦合系数,从而有利于调整通带宽度。(版权):( C)2001,日本特许厅

著录项

  • 公开/公告号JP3433914B2

    专利类型

  • 公开/公告日2003-08-04

    原文格式PDF

  • 申请/专利权人 日本電気株式会社;

    申请/专利号JP19990254882

  • 发明设计人 服部 渉;

    申请日1999-09-08

  • 分类号H01P1/203;H01L39/00;

  • 国家 JP

  • 入库时间 2022-08-22 00:20:44

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