MAGNETIC STORAGE DEVICE, AND REWRITING AND READ-OUT METHOD FOR MAGNETIC STORAGE DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a magnetic storage device in which cross talk between magnetic memory cells is suppressed and which can be manufacturing easily.;SOLUTION: This device is provided with magnetic memory cells arranged in a matrix state, work lines 121-123 arranged corresponding to these magnetic memory cells, bit lines 111-113, digit lines 131-133, and a first diode 106. The magnetic memory cells are connected to these lines electrically at regions at which bit lines and digit lines are intersected. Further, the magnetic memory cells comprises a TMR element 101 connected to the bit lines and a second diode 107 connected to word lines.;COPYRIGHT: (C)2003,JPO