METHOD FOR IDENTIFYING EXTREME INTERACTION PITCH REGION, METHOD FOR DESIGNING MASK PATTERN, METHOD FOR MANUFACTURING MASK, DEVICE MANUFACTURING METHOD AND COMPUTER PROGRAM

摘要

PROBLEM TO BE SOLVED: To provide a method for identifying an extreme interaction pitch region, a method for designing and manufacturing a mask pattern, a device manufacturing method and a computer program.;SOLUTION: Optical proximity effect(OPE) is caused by structural interaction between a main feature and an adjacent feature. The critical size and the process latitude of the main feature can be improved by strengthening photo-field effect interference or can be deteriorated by weakening photo-field effect interference in accordance with the phase of an electric filed, which is generated by the adjacent feature. The phase of the electric field, which is generated by the adjacent feature, depends on a pitch and an illumination angle. An inhibition pitch area is a position where the electric field generated by the adjacent feature interacts with the electric field of the main feature so that they are weakened. In the method, the inhibition pitch area is identified and removed with respect to the arbitrary feature size and an illumination condition.;COPYRIGHT: (C)2003,JPO