METHOD FOR PRODUCING VANADIUM-CONTAINING OXIDE THIN FILM BY VAPOR-PHASE GROWTH METHOD USING VANADIUM TRIS (amp;beta;-DIKETONATE) AND RAW MATERIAL SOLUTION

摘要

PROBLEM TO BE SOLVED: To provide a solution which contains three components of (La, Ti, V), and has a long pot life as the raw material for a (Bi_4-xLa_x) (Ti_3-yV_y)O₁₂ (0x4, and 0y3) thin film by a solution flash CVD(chemical vapor deposi tion) process, and to provide a method for producing the thin film using the raw material solution. ;SOLUTION: A butyl acetate solution in which the three components of V(dpm)₃, La(dpm)₃ and Ti(OiPr)₂ (dpm)₂ are dissolved is a reddish brown transparent liquid. The solution has no precipitates, and is perfectly dissolved, and has a long pot life that the generation of precipitates does not appear even after three months. This solution and a butyl acetate solution of BiPh₃ are evaporated by an evaporator heated at 220°C, and are introduced, together with gaseous Ar and gaseous O₂, into the surface of a (111)Pt/SiO₂/(100)Si substrate heated to 650°C under the reaction pressure of 10 Torr, and they are thermally decomposed and deposited thereon, so that a BLTV thin film oriented in the C axis direction can be deposited.;COPYRIGHT: (C)2003,JPO