首页> 外国专利> MULTIPLE EXPOSURE LITHOGRAPHY SYSTEM AND MULTIPLE EXPOSURE TYPE LITHOGRAPHY SYSTEM

MULTIPLE EXPOSURE LITHOGRAPHY SYSTEM AND MULTIPLE EXPOSURE TYPE LITHOGRAPHY SYSTEM

机译:多次曝光光刻技术和多次曝光类型光刻技术

摘要

PROBLEM TO BE SOLVED: To draw circuit patterns subjected to coordinate transformation with high accuracy. ;SOLUTION: The prescribed patterns are formed on a drawing surface by multiple exposure using an exposure unit having a multiplicity of micromirrors arrayed in a matrix form. When the coordinate transformation is necessary, the coordinate of the corresponding position of the micromirrors is subjected to the coordinate transformation, the raster data corresponding to the coordinate data before the coordinate transformation is read out of a bit map memory 52 and stored in an exposure data memory 54. The stored exposure data is applied to the micromirrors corresponding to the coordinate data after the coordinate transformation.;COPYRIGHT: (C)2003,JPO
机译:解决的问题:高精度地绘制经过坐标变换的电路图案。 ;解决方案:使用具有以矩阵形式排列的多个微镜的曝光单元,通过多次曝光在绘图面上形成规定的图案。当需要坐标变换时,对微镜的相应位置的坐标进行坐标变换,将与坐标变换之前的坐标数据相对应的光栅数据从位图存储器52中读出并存储在曝光数据中。存储器54。将存储的曝光数据施加到与坐标变换后的坐标数据相对应的微镜。;版权所有:(C)2003,JPO

著录项

  • 公开/公告号JP2003050469A

    专利类型

  • 公开/公告日2003-02-21

    原文格式PDF

  • 申请/专利权人 PENTAX CORP;

    申请/专利号JP20010240411

  • 发明设计人 OKUYAMA TAKASHI;

    申请日2001-08-08

  • 分类号G03F7/20;G03F9/00;H05K3/00;

  • 国家 JP

  • 入库时间 2022-08-22 00:16:19

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