首页> 外国专利> WAVELENGTH CONTROL DEVICE FOR WAVELENGTH VARIABLE SEMICONDUCTOR LASER, WAVELENGTH CONTROL METHOD AND WAVELENGTH VARIABLE SEMICONDUCTOR LASER DEVICE

WAVELENGTH CONTROL DEVICE FOR WAVELENGTH VARIABLE SEMICONDUCTOR LASER, WAVELENGTH CONTROL METHOD AND WAVELENGTH VARIABLE SEMICONDUCTOR LASER DEVICE

机译:波长可变半导体激光的波长控制装置,波长控制方法及波长可变半导体激光装置

摘要

PROBLEM TO BE SOLVED: To realize highly accurate and stabilized wavelength control by employing a simplified data base decreased in memory data, in a semiconductor laser, readily generating multi-mode oscillations and provided with a DBR structure.;SOLUTION: The wavelength variable semiconductor laser device is provided with the database 25 and a power supply controller 26. The database 25 stores a function or an information for specifying the function passing through a stably oscillating region from the relation between a pouring current If into a front SSG DBR region 31 as well as the pouring current Ir into a rear SSG DBR region 34 and an oscillation wavelength. The power supply controller 26 controls the pouring current If into the front SSG DBR region 31 and the pouring current Ir into the rear SSG DBR region 34 based on the stored data of the database 25.;COPYRIGHT: (C)2004,JPO
机译:解决的问题:在半导体激光器中,通过使用减少了存储数据的简化数据库来实现高精度和稳定的波长控制,在半导体激光器中,容易产生多模振荡并具有DBR结构。该装置还具有数据库25和电源控制器26。数据库25还存储功能或用于指定功能的信息,该功能或信息也根据从浇注电流If到前SSG DBR区域31之间的关系来指定经过稳定振荡区域的功能。作为注入电流Ir,注入后SSG DBR区域34和振荡波长。电源控制器26基于数据库25的存储数据,控制流入前SSG DBR区域31的浇注电流If和流入后SSG DBR区域34的浇注电流Ir。版权所有:(C)2004,JPO

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