SOLUTION FOR CMP, SOLUTION FOR RuCMP, AND RUTHENIUM PATTERN-FORMING METHOD UTILIZING THEM

摘要

PROBLEM TO BE SOLVED: To improve the polishing speed to an Ru layer in the formation of a ruthenium pattern, and further to reduce dishing phenomenon in the Ru layer and scratch phenomenon in an interlayer insulating film.;SOLUTION: The solution for Ru CMP, used for polishing the surface of an Ru layer, is set to nitric acid aqueous solution containing cerium nitrate ammonium. More specifically, cerium nitrate ammonium is added to nitric acid aqueous solution having a concentration of 0.01 to 10 M so that a concentration of 0.01 to 10 M is obtained. When the solution for Ru CMP is utilized, the polishing speed of the Ru layer can be increased under low pressure, thus reducing dishing phenomenon in the Ru layer and scratch phenomenon in an interlayer insulating film.;COPYRIGHT: (C)2003,JPO