NANO-CRYSTAL STRUCTURE, NANO-CRYSTAL STRUCTURE MANUFACTURING METHOD, NON-LINEAR RESISTANCE ELEMENT, AND THERMOELECTRIC CONVERSION ELEMENT

摘要

PROBLEM TO BE SOLVED: To solve such problems that a known barrister material is a sintered metal oxide, the film thickness of an element is basically thick, the element is hardly miniaturizable, and the variety of the material is limited.;SOLUTION: A large number of XSi₂ crystal grains are uniformly deposited in an amorphous base material of two-covalent element (X) and silicon (Si), at least a part of the deposited XSi₂ crystal grains are percolated, and subjected to sufficient heat treatment to uniformly diffuse the Si crystal into the base material. A nano crystal structure with non-linear resistance characteristic can be provided thereby.;COPYRIGHT: (C)2003,JPO