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Methods and devices for detecting a distribution of charged-particle density of a charged-particle beam in charged-particle-beam microlithography systems

机译:在带电粒子束微光刻系统中检测带电粒子束的带电粒子密度分布的方法和装置

摘要

Charged-particle-beam (CPB) microlithography systems are disclosed that include a device for measuring the distribution of charged-particle density in a patterned beam. By providing feedback to the CPB microlithography apparatus, the distribution of charged-particle density can be optimized for high-quality exposures. An embodiment of the device includes a pinhole diaphragm defining an aperture having a small cross-dimension compared to the transverse width of the patterned beam produced by the system. The device also desirably includes a downstream scattering-contrast diaphragm defining an aperture having a larger cross dimension than that of the pinhole aperture. A photodiode or the like is downstream of the pinhole aperture and is used for detecting charged particles transmitted by the pinhole diaphragm. A patterned beam is scanned across the pinhole aperture, and charged particles not scattered during passage through the pinhole aperture propagate to the photodiode. The distribution of charged particle density is obtained from the photodiode signal, which can be fed back to components of the CPB microlithography system.
机译:公开了带电粒子束(CPB)微光刻系统,其包括用于测量图案化光束中的带电粒子密度分布的装置。通过向CPB微光刻设备提供反馈,可以针对高质量曝光优化带电粒子密度的分布。该设备的实施例包括针孔隔膜,该针孔隔膜限定了与该系统产生的图案化光束的横向宽度相比具有较小横截面尺寸的孔。该装置还理想地包括下游散射对比膜片,该膜片限定了孔的横截面尺寸大于针孔孔的横截面尺寸。光电二极管等在针孔孔径的下游,用于检测由针孔隔膜透射的带电粒子。穿过针孔孔径扫描图案化的光束,并且在穿过针孔孔径期间未散射的带电粒子传播到光电二极管。带电粒子密度的分布是从光电二极管信号获得的,可以将其反馈给CPB微光刻系统的组件。

著录项

  • 公开/公告号US2003111618A1

    专利类型

  • 公开/公告日2003-06-19

    原文格式PDF

  • 申请/专利权人 NIKON CORPORATION;

    申请/专利号US20020264093

  • 发明设计人 JIN UDAGAWA;NORIYUKI HIRAYANAGI;

    申请日2002-10-02

  • 分类号H01J37/302;

  • 国家 US

  • 入库时间 2022-08-22 00:11:54

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