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Exposure method, plane alignment method, exposure apparatus, and device manufacturing method

机译:曝光方法,平面对准方法,曝光设备和器件制造方法

摘要

A predetermined wafer (5) is exposed with the first exposure layout by using a projection optical system (4) for projecting the pattern of a reticle (2) onto the wafer, an illumination device (10) and light-receiving device (11) for detecting a plurality of plane positions on the wafer (5), and a driving unit for driving the wafer (5) along the optical axis of the projection optical system (4). Prior to the second exposure with the second exposure layout at the second exposure field size, a position where a plane position is to be detected is determined on the basis of at least one of the first exposure field size, the first exposure layout, and underlayer information of the first exposure. Then, the plane position is detected.
机译:预定的晶片( 5 )通过使用投影光学系统( 4 )来投影掩模版( 2 )在晶片上,用于检测晶片( 5)上多个平面位置的照明设备( 10 )和光接收设备( 11 ),以及用于沿着投影光学系统( 4 )的光轴驱动晶片( 5 )的驱动单元。在以第二曝光场尺寸进行第二曝光布局的第二曝光之前,基于第一曝光场尺寸,第一曝光布局和底层中的至少一个来确定要检测平面位置的位置。第一次曝光的信息。然后,检测平面位置。

著录项

  • 公开/公告号US2002166982A1

    专利类型

  • 公开/公告日2002-11-14

    原文格式PDF

  • 申请/专利权人 CANON KABUSHIKI KAISHA;

    申请/专利号US20020127765

  • 发明设计人 YOSHIHARU KATAOKA;TAI HOSHI;

    申请日2002-04-23

  • 分类号G03B27/42;

  • 国家 US

  • 入库时间 2022-08-22 00:11:43

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