Method for manufacturing semiconductor device including two-step ashing process of N2 plasma gas and N2/H2 plasma gas

摘要

In a method for manufacturing a semiconductor device, a photoresist pattern layer is formed on an interlayer insulating layer made of inorganic material including CH₃-groups and/or H-groups. Then, the interlayer insulating layer is etched by using the photoresist pattern layer as a mask. Finally, a two-step ashing process is performed upon the photoresist pattern layer while the interlayer insulating layer is exposed. The two-step ashing process includes a first step using N₂ plasma gas and a second step using N₂/H₂ plasma gas after the first step.