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Series connected TC unit type ferroelectric RAM and test method thereof
Series connected TC unit type ferroelectric RAM and test method thereof
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机译:串联连接的tc单元型铁电体及其测试方法
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摘要
Potential of a word line connected to any selected one of memory cells is lowered and potential of word lines connected to non-selected memory cells are raised. The potential of the plate line is raised and lowered. The potential of the bit line is raised and lowered. After this, reading data from the memory cells after potential raising and lowering of the plate line and potential raising and lowering of the bit line have been alternately performed at least one time, thereby to determine attenuation of polarization in the ferroelectric capacitor.
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