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Clathrate compounds, manufacture thereof, and thermoelectric materials, thermoelectric modules, semiconductor materials and hard materials based thereon

机译:笼形化合物,其制造以及基于其的热电材料,热电模块,半导体材料和硬质材料

摘要

In high-tech fields such as electronics, the development of new high performance materials which differ from conventional materials has received much attention. An object of the present invention is to provide a clathrate compound which can be used as a thermoelectric material, a hard material, or a semiconductor material. Atoms of an element from group 4B of the periodic table are formed into a clathrate lattice, and a clathrate compound is then formed in which specified doping atoms are encapsulated within the clathrate lattice, and a portion of the atoms of the clathrate lattice are substituted with specified substitution atoms. Suitable doping atoms are atoms from group 1A, group 2A, group 3A, group 1B, group 2B, group 3B, group 4A, group 5A, group 6A, and group 8, and suitable substitution atoms are atoms from group 1A, group 2A, group 3A, group 1B, group 2B, group 3B, group 5A, group 6A, group 7A, group 5B, group 6B, group 7B, and group 8 of the periodic table. Suitable manufacturing methods include melt methods and sintering methods, and moreover intercalant intercalation compounds or the like may also be used as raw materials.
机译:在诸如电子的高科技领域,与常规材料不同的新型高性能材料的开发受到了广泛的关注。本发明的目的是提供可以用作热电材料,硬质材料或半导体材料的笼形化合物。将元素周期表中第4B组的元素的原子形成一个笼形晶格,然后形成一个笼形化合物,其中将特定的掺杂原子封装在该笼形晶格中,并将该笼形晶格的一部分原子替换为指定的取代原子。合适的掺杂原子是1A,2A,3A,1B,2B,3B,4A,5A,6A和8组的原子,合适的取代原子是1A,2A,周期表的第3A族,第1B族,第2B族,第3B族,第5A族,第6A族,第7A族,第5B族,第6B族,第7B族和第8族。合适的制造方法包括熔融方法和烧结方法,此外,嵌入剂嵌入化合物等也可以用作原料。

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