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Ultra-high linearity RF passive mixer

机译:超高线性度RF无源混频器

摘要

A CMOS implemented passive mixer circuit for improving linearity performance in wireless communication systems is described, including dual pairs of NMOS FETs and dual pairs of PMOS FETs. Each NMOS FET is connected in parallel with a corresponding PMOS FET. A local oscillator signal is provided to the gate of one FET while a 180-degree phase shifted local oscillator signal is provided to the gate of its complementary FET. Because the complementary FETs are driven by local oscillator signals that are 180 degrees out of phase, the NMOS FET is turned on for at least a portion of the positive cycle of the local oscillator signal and the PMOS FET is turned on for at least a portion of the negative cycle of the 180-degree phase shifted local oscillator signal. Distortion in the mixed output signal is thereby reduced.
机译:描述了用于改善无线通信系统中的线性性能的CMOS实现的无源混频器电路,包括双对NMOS FET和双对PMOS FET。每个NMOS FET与对应的PMOS FET并联连接。本地振荡器信号提供给一个FET的栅极,而180度相移的本地振荡器信号提供给其互补FET的栅极。因为互补FET由相位相差180度的本地振荡器信号驱动,所以NMOS FET在本地振荡器信号的正周期的至少一部分期间导通,而PMOS FET在至少一部分的正周期内导通180度相移的本地振荡器信号的负周期。从而减少了混合输出信号中的失真。

著录项

  • 公开/公告号US2003162515A1

    专利类型

  • 公开/公告日2003-08-28

    原文格式PDF

  • 申请/专利权人 ZHOU SINING;

    申请/专利号US20020086937

  • 发明设计人 SINING ZHOU;

    申请日2002-02-28

  • 分类号H04B1/18;

  • 国家 US

  • 入库时间 2022-08-22 00:09:08

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