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Method of manufacturing semiconductor device for protecting Cu layer from post chemical mechanical polishing-corrosion and chemical mechanical polishing equipment used in the same
Method of manufacturing semiconductor device for protecting Cu layer from post chemical mechanical polishing-corrosion and chemical mechanical polishing equipment used in the same
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机译:用于保护Cu层免受后化学机械抛光腐蚀的半导体器件的制造方法及其中使用的化学机械抛光设备
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摘要
A method of manufacturing a semiconductor device for protecting a Cu layer from post chemical mechanical polishing (CMP) corrosion and CMP equipment therefore wherein, when wafers on which a Cu layer is formed wait to be transferred to a cleaning system after being polished in a CMP equipment, the wafers collected at a stand-by station are supplied with a solution containing a corrosion inhibitor, thus at least keeping the polished surface of Cu layer wet with the solution. Then, the wafers collected at the stand-by station are transferred to the cleaning system and cleaned. In the present invention, the solution uses a solution in which the corrosion inhibitor is added to de-ionized water. Furthermore, while transferring the wafers, the surfaces of the transferred wafers are kept wet with a solution containing a corrosion inhibitor.
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