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Method for preparing manganese-based nitride having nearly zero temperature coefficient of resistivity
Method for preparing manganese-based nitride having nearly zero temperature coefficient of resistivity
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机译:电阻率温度系数几乎为零的锰基氮化物的制备方法
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摘要
The present invention relates to a method for preparing manganese-based nitride having nearly zero temperature coefficient of resistivity and more particularly, to the effective method for preparing manganese-based nitride expressed by the formula (1), wherein the manganese-based nitride, prepared by heating the stoichiometric mixture of Mn2N and Cu in an evacuated quartz tube, provides some advantages in that i) the use of the Mn2N compound as a reactant, the formation of impurities and nitrogen evaporation may be prevented, and ii) through nitrogen is tightly bonded between metals, the manganese-based nitride has extremely low (46 ppm/K) temperature coefficient of resistivity.
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