首页> 外国专利> Charged-particle-beam microlithography apparatus and methods for preventing coulomb effects using the hollow-beam technique

Charged-particle-beam microlithography apparatus and methods for preventing coulomb effects using the hollow-beam technique

机译:带电粒子束微光刻设备和使用中空束技术防止库仑效应的方法

摘要

Apparatus and methods are disclosed for charged-particle-beam (CPB) microlithography using a hollow beam. The hollow beam is produced by passing the charged particle beam through a scattering aperture. However, passage of the beam is performed in a manner by which the scattering aperture is prevented from overheating. Also, the scattering aperture can be made from a material that is micro-machined easily. The scattering aperture can be configured as a beam-scattering aperture plate defining voids that collectively define an annular aperture. The scattering aperture is situated at a beam-crossover plane. As the charged particle beam strikes the scattering aperture, particles pass readily through the voids as a “transmitted beam.” Particles incident on the scattering aperture plate are scattered and become a “scattered beam.” The transmitted beam passes readily through a downstream blocking aperture, whereas most particles of the scattered beam are absorbed by the blocking aperture.
机译:公开了用于使用中空束的带电粒子束(CPB)微光刻的设备和方法。通过使带电粒子束穿过散射孔来产生中空束。然而,以防止散射孔过热的方式进行光束的通过。而且,散射孔可以由易于微机械加工的材料制成。散射孔可以被配置为束散射孔板,该束散射孔板限定了共同限定环形孔的空隙。散射孔位于光束交叉平面处。当带电粒子束撞击散射孔时,粒子容易作为“透射束”穿过空隙。入射在散射孔板上的粒子被散射并成为“散射束”。透射光束容易通过下游的阻挡孔,而散射光束的大多数粒子被阻挡孔吸收。

著录项

  • 公开/公告号US6563125B1

    专利类型

  • 公开/公告日2003-05-13

    原文格式PDF

  • 申请/专利权人 NIKON CORPORATION;

    申请/专利号US20000575211

  • 发明设计人 SHOHEI SUZUKI;

    申请日2000-05-18

  • 分类号G21G50/00;G21K51/00;H01J251/40;A61N50/00;

  • 国家 US

  • 入库时间 2022-08-22 00:07:33

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