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Plasma etching method to form dual damascene with improved via profile
Plasma etching method to form dual damascene with improved via profile
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机译:等离子蚀刻方法形成具有改进的通孔轮廓的双镶嵌
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摘要
A method for plasma etching a semiconductor feature to improve an etching profile including providing a semiconductor wafer comprising a first feature opening anisotropically etched though a thickness portion of at least one dielectric insulating layer; anisotropically etching a second feature opening overlying and at least partially encompassing the first feature opening according to a reactive ion etch (RIE) process to leave an unetched portion surrounding a first feature opening portion at about a bottom portion level of the second feature opening; and, plasma treating the first and second openings with a plasma formed of a mixture of oxygen and nitrogen plasma source gases including an applying an independently variable RF bias power source to the semiconductor wafer to remove the unetched portion.
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