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Apparatus and methods for charged-particle-beam microlithography exhibiting reduced four-fold aberrations

机译:用于带电粒子束微光刻的装置和方法,其像差降低了四倍

摘要

Charged-particle-beam microlithography apparatus are disclosed that exhibit minimal deflection aberrations while providing large-magnitude deflections of the charged particle beam using a relatively small excitation current. The apparatus comprises multiple deflectors. A representative deflector comprises a toroidal deflector coil having a semi-angle of 72° and a toroidal saddle deflector coil having a semi-angle of 36°. By adjusting the dimensions and number of windings of each coil, and the excitation current applied to each coil, magnetic-field components associated with cos[3&phgr;] and with cos[5&phgr;], which are higher-order components in the deflection field, are minimized. As a result, four-fold aberrations are minimized and deflection sensitivity is increased.
机译:公开了带电粒子束微光刻设备,其显示最小的偏转像差,同时使用相对较小的激励电流提供带电粒子束的大幅度偏转。该设备包括多个偏转器。代表性的偏转器包括具有72°半角的环形偏转器线圈。环形鞍形偏转线圈的半角为36°。通过调节每个线圈的绕组的尺寸和数量以及施加到每个线圈的励磁电流,与cos 3和ph 3相关的磁场分量被调整。并使用cos[ 5&phgr;]将偏转场中的高阶分量最小化。结果,使四倍像差最小化并且提高了偏转灵敏度。

著录项

  • 公开/公告号US6507027B1

    专利类型

  • 公开/公告日2003-01-14

    原文格式PDF

  • 申请/专利权人 NIKON CORPORATION;

    申请/专利号US19990399916

  • 发明设计人 SHINICHI KOJIMA;KOICHI KAMIJO;

    申请日1999-09-21

  • 分类号H01J371/45;H01J373/00;

  • 国家 US

  • 入库时间 2022-08-22 00:06:14

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