IN SITU DEPOSITION AND INTEGRATION OF SILICON NITRIDE IN A HIGH DENSITY PLASMA REACTOR

摘要

A method of depositing a dielectric film on a substrate, comprisingdepositing a silicon oxide layer on the substrate; and treating the dielectric layer withoxygen. A layer of FSG having a fluorine content of greater than 7 %, as measured bypeak height ratio, deposited by HDP CVD, is treated with an oxygen plasma. Theoxygen treatment stabilizes the film. In an alternative embodiment of the invention athin ( 1000 A thick) layer of material such as silicon nitride is deposited on a layer ofFSG using a low-pressure strike. The low pressure strike can be achieved byestablishing flows of the process gases such that the pressure in the chamber is between5 and 100 millitorr, turning on a bias voltage for a period of time sufficient to establisha weak plasma, which may be capacitively coupled. After the weak plasma isestablished a source voltage is turned on and subsequently the bias voltage is turnedoff. Silicon nitride layers deposited using the low pressure strike exhibit gooduniformity, strong adhesion, and inhibit outgassing from underlying layers.