首页> 外国专利> ANTIPARALLEL (AP) PINNED SPIN VALVE SENSOR WITH GIANT MAGNETORESISTIVE (GMR) ENHANCING LAYER

ANTIPARALLEL (AP) PINNED SPIN VALVE SENSOR WITH GIANT MAGNETORESISTIVE (GMR) ENHANCING LAYER

机译:带有大磁阻(GMR)增强层的反平行(AP)钉状旋转阀传感器

摘要

The present invention is an external field stabilized, and near zero magnetoresistivedouble spin valve sensor (800) with giant magnetoresistive (GMR) enhancing (852,854) antiparallel pinned (802) and sense current field pinned (842) layers. In order toenhance the spin dependent scattering, first and second GMR enhancing layers (852,854) are employed. Further, in order to double the spin valve effect, a sense currentfield (SCF) pinned layer (842) is employed which is pinned in the same direction asthe second film (810) of the AP pinned layer (802). In the preferred embodiment all ofthe magnetic layers are constructed of cobalt iron (Co[err]Fe[err]) so that their magneticmoments are returned to their original positions after the occurrence of an externalfield. Further, the cobalt iron (Co[err]Fe[err]) has near zero magnetostriction so that stressinduced anisotropy does not alter the magnetic properties of these layers.
机译:本发明是一种稳定的外部磁场,并且磁阻接近于零双旋转阀传感器(800),具有增强的巨磁阻(GMR)功能(852,854)反平行钉扎层(802)和感测电流场钉扎层(842)。为了增强与自旋相关的散射,第一和第二GMR增强层(852,854)。此外,为了使自旋阀效应加倍,检测电流磁场(SCF)固定层(842)的使用方向与AP钉扎层(802)的第二膜(810)。在优选实施例中,所有磁性层由钴铁(Co [err] Fe [err])制成外部因素发生后,力矩返回到其原始位置领域。此外,钴铁(Co [err] Fe [err])的磁致伸缩接近于零,因此应力感应各向异性不会改变这些层的磁性。

著录项

  • 公开/公告号SG97817A1

    专利类型

  • 公开/公告日2003-08-20

    原文格式PDF

  • 申请/专利权人 INTERNATIONAL BUSINESS MACHINES CORPORATION;

    申请/专利号SG19990005414

  • 发明设计人 HARDAYAL SINGH GILL;

    申请日1999-11-01

  • 分类号G11B5/30;5/31;

  • 国家 SG

  • 入库时间 2022-08-22 00:00:48

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