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Amplifiers and light sources employing s-band erbium-doped fiber and l-band thulium-doped fiber with distributed suppression of amplified spontaneous emission (ase)

机译:采用s波段掺b光纤和l波段掺-光纤的放大器和光源,具有对放大的自发发射(酶)的分布式抑制

摘要

A fiber amplifier in a depressed cladding or W-profile fiber. The fiber has a core doped with the acitve material and defined by a core cross-section and a refractive index no. A depressed cladding of index n1 surrounds the core and a secondary cladding of index n2 surrounding the depressed cladding. The fiber amplifier is pumped a level of high relative inversion D, such that the active material exhibits positive gains in a short wavelength band and high gains in a long wavelength band. The core cross-section, the depressed cladding cross-section and the refractive indices no, n1, and n2 are selected to obtain a roll-off loss curve about a cutoff wavelength &lgr;c. The roll-off loss curve yields losses at least comparable to the high gains in the long wavelength band and losses substantially smaller than the positive gains in the short wavelength band. To obtain the desired roll-off loss curve the refractive index no in the core is selected such that an effective index neff experienced by a mode of radiation which is guided is large. Specifically, the choice is made such that the effective index neff experienced by the confined mode maximizes a roll-off slope of the roll-off loss curve before the cutoff wavelength, e.g. the slope of neff is in the range of 0.002/10000 nm to 0.008/1000 nm before the cutoff wavelength and the roll-off slope of the roll-off loss curve is greater than the maximum slope of the gain spectrum.
机译:凹陷的包层或W型光纤中的光纤放大器。纤维具有掺杂有活性材料的纤芯,并由纤芯横截面和折射率n o 定义。索引为n 1 的凹陷包层围绕纤芯,索引为n 2 的次级包层围绕凹陷包层。光纤放大器被泵浦了一个高相对反转D的电平,以使活性材料在短波长带显示正增益,在长波长带显示高增益。选择纤芯横截面,凹陷包层横截面以及折射率n o ,n 1 和n 2 截止波长为 c 的滚降损耗曲线。滚降损耗曲线产生的损耗至少可与长波长带中的高增益相媲美,而损耗则基本上小于短波长带中的正增益。为了获得所需的滚降损耗曲线,选择纤芯中的折射率n o ,以使通过辐射模式引导的有效折射率n eff 大。具体而言,进行选择以使得受限模式所经历的有效指数n eff 在截止波长(例如,截止波长)之前最大化滚降损耗曲线的滚降斜率。在截止波长之前,n eff 的斜率在0.002 / 10000 nm至0.008 / 1000 nm范围内,滚降损耗曲线的滚降斜率大于增益频谱。

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