Application of Power semiconductor device with monolithically integrated sense device

摘要

The power semiconductor component includes a load transistor (LT) together with which two further transistors (ST1, ST2) and two resistors (R1, R2) are monolithically integrated. A series circuit of the transistor (ST1) and the resistor (R1), together with the load transistor form a current mirror. A measurement voltage (U1) is applied to the resistor (R1). A second series circuit of the second further transistor (ST2) and the second resistor (R2) together with the load transistor form a second current mirror. A second measuring voltage (U2) is applied to the second resistor (R2).