首页> 外国专利> HIGH THROUGHPUT CHEMICAL ANALYSIS BY IMPROVED DESORPTION/IONIZATION ON SILICON MASS SPECTROMETRY

HIGH THROUGHPUT CHEMICAL ANALYSIS BY IMPROVED DESORPTION/IONIZATION ON SILICON MASS SPECTROMETRY

机译:改进的硅质谱分析法的高解吸/电离高通量化学分析

摘要

A method of making improved substrates for desorbing and ionizing analytes takes an n-type semiconductor substrate and provides a strong light source. By focusing the illumination from the light source onto the n-type semiconductor substrate results in at least one lit region on the n-type semiconductor substrate. The substrate is electrochemically etched with a low current during illumination to form at least one sample reservoir, each sample reservoir being formed at a respective lit region on the n-type semiconductor substrate.
机译:制备用于解吸和离子化分析物的改进基板的方法采用n型半导体基板并提供强光源。通过将来自光源的照明聚焦到n型半导体衬底上,在n型半导体衬底上产生至少一个发光区域。在照明期间,以低电流对基板进行电化学蚀刻,以形成至少一个样品容器,每个样品容器形成在n型半导体基板上相应的照亮区域。

著录项

  • 公开/公告号WO03023839A1

    专利类型

  • 公开/公告日2003-03-20

    原文格式PDF

  • 申请/专利权人 MASS CONSORTIUM CORPORATION;

    申请/专利号WO2002US28996

  • 发明设计人 SIUZDAK GARY;SHEN ZHOUXIN;

    申请日2002-09-12

  • 分类号H01L21/302;C25F3/12;H01J49/04;

  • 国家 WO

  • 入库时间 2022-08-21 23:53:55

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