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METHOD OF FORMING A DOPED REGION IN A SEMICONDUCTOR BODY COMPRISING A STEP OF AMORPHIZATION BY IRRADIATION
METHOD OF FORMING A DOPED REGION IN A SEMICONDUCTOR BODY COMPRISING A STEP OF AMORPHIZATION BY IRRADIATION
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机译:在半导体本体中形成掺杂区的方法,该方法包括通过辐照进行电离的步骤
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摘要
In the method of manufacturing a semiconductor device (1) with a semiconductor body (2), a doped zone (3) is formed in the semiconductor body (2). The semiconductor body (2) has a crystalline surface region (4), which crystalline surface region (4) is at least partly amorphized so as to form an amorphous surface layer (5). The amorphization is achieved by irradiating the surface (6) with a radiation pulse (7) which is absorbed by the crystalline surface region (4). The radiation pulse (7) has a wavelength which is chosen such that the radiation is absorbed by the crystalline surface region (4), and the energy flux of the radiation pulse (7) is chosen such that the crystalline surface layer (5) is melted. The method is useful for making ultra-shallow junctions.
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