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Apparatus and method for aligning semiconductor die to interconnect metal on flex substrate and product therefrom

机译:用于使半导体管芯对准以使柔性基板上的金属互连的设备和方法及其产品

摘要

A method and process sequence for accurately aligning (14) die (108) to interconnect metal (112) on flex substrate (100) such as polyimide flex is described. A mask (102) for via formation is first patterned (12) in a metal layer on the bottom surface of the flex substrate (100). Die attach means (104) such as die attach adhesive is then applied (13) to the top side of flex substrate (100). The bond pads (106) on die are locally, adaptively aligned (14) to the patterned metal via mask (102) on the flex (100) with high accuracy. Vias (110) down to the die bond pads (106) are then created (15) by either plasma etching or excimer laser ablation through the existing aligned metal mask (102) on the flex substrate (100), and interconnect metal (112) is then deposited (16), patterned and etched (17). As a result of this process, the flex metal interconnect artwork does not have to be customized for each die misplacement using "adaptive lithography". Lower cost commercially available lithography equipment can be used for processing, reducing capital equipment and processing cost. The method is compatible with the projected designs of the next generation die which will have bond pads on the order of 40µm in size.
机译:描述了一种用于精确对准(14)管芯(108)以使诸如聚酰亚胺挠曲的挠曲衬底(100)上的金属(112)互连的方法和工艺顺序。首先在柔性基板(100)的底表面上的金属层中对用于形成通孔的掩模(102)进行构图(12)。然后将模片附接装置(104)例如模片附接粘合剂施加(13)到柔性基板(100)的顶侧。管芯上的键合焊盘(106)通过柔性(100)上的掩模(102)以高精度局部自适应地对准(14)到图案化的金属。然后通过等离子体蚀刻或受激准分子激光烧蚀穿过柔性衬底(100)上的现有对准金属掩模(102),来形成(15)向下到芯片键合焊盘(106)的通孔(110)。然后沉积(16),构图和蚀刻(17)。作为该过程的结果,不必使用“自适应光刻”针对每个管芯错位定制柔性金属互连艺术品。可以使用成本更低的市售光刻设备进行处理,从而减少了资本设备和处理成本。该方法与下一代芯片的预计设计兼容,该芯片的焊盘尺寸约为40μm。

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