SPUTTERING APPARATUS FOR SPUTTERING HIGH MELTING POINT METAL AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE HAVING HIGH MELTING POINT METAL

摘要

A method of manufacturing a semiconductor device for forming a silicide layer of a high melting point metal is provided, wherein the high melting point metal is sputtered under a condition that no deterioration occurs by the sputtering device. Also provided is a sputtering apparatus for manufacturing a semiconductor device. In the method of the present invention, a high melting point metal is deposited on a silicon substrate formed of a gate electrode of a semiconductor device to form a high melting point metal film, and then heat treated to a silicide layer of a high melting point metal at an interface with the metal film having a high melting point. In this case, an electrically conductive collimator plate is disposed between the semiconductor substrate and the target of the high melting point metal layer, so that the charge-up of the gate electrode is suppressed by the electrically conductive collimator plate.