A METHOD TO ENHANCE THE ADHESION OF SILICON NITRIDE TO LOW-K FLUORINATED AMORPHOUS CARBON USING A SILICON CARBIDE ADHESION PROMOTER LAYER

摘要

Plasma enhanced chemical vapor deposition (PECVD) process is provided for depositing one or more dielectric muljilreul on a wiring board bearing the integrated circuit. aF having an internal compressive stress of about 28 ㎫: to deposit the C layer, the method by providing a fluorine-containing gas, preferably in octafluoro cyclobutane, and the carbon-containing gas, preferably methane, to a substrate and a step of depositing a: (C aF) layer amorphous fluorinated gas. After deposition, the film is annealed at about 400 ℃ for about 2 hours. Then, the adhesion promoter layer relative to the hydrogen bonding silicon carbide does not have hydrogen aF using silane (SiH ₄₎ and methane (CH ₄₎ as a deposition gas: C is deposited on the layer. The silicon carbide layer may be deposited at a rate of about 180 Å per minute, typically result in the deposition of silicon carbide having an internal compressive stress of about 400 ㎫. aF for C:: the deposited silicon carbide layer has a relatively low hydrogen bonding, the silicon nitride layer and aF thereby producing a compact structure for enhancing the adhesion between the layer C, and it is of fluorine through the silicon carbide layer It reduces the spread. Then, the silicon nitride layer is deposited on adhesion promoter layer, preferably a vapor deposition material 30 eseo 400 ℃: consists of 100 ratio with a silane (SiH ₄₎ and nitrogen (N _2). A silicon nitride layer formed has a relatively low hydrogen bonding to, and as a result produce a layer having an internal compressive stress of about 240 ㎫. A stack-layer structure has a thermal stability, and resistance to delamination and cracking to 450 ℃, aF: C dielectric layer has a lower dielectric constant (k) less than 2.5.