首页> 外国专利> Mask for measuring flare method for fabricating the same method for measuring flare-affected range on a wafer and method for correcting patterns in flare-affected range using the same

Mask for measuring flare method for fabricating the same method for measuring flare-affected range on a wafer and method for correcting patterns in flare-affected range using the same

机译:用于测量耀斑的掩模的方法,用于制造用于测量晶片上耀斑的影响范围的相同方法,以及使用该方法校正在耀斑的影响范围内的图案的方法

摘要

PURPOSE: A mask for measuring flare is provided to determine whether flare of a lens occurs by performing a photolithography process while using a mask having a light blocking region and a light transmitting region which have a plurality of light transmitting patterns. CONSTITUTION: The light blocking region and the light transmitting region are defined on a mask substrate. A plurality of line patterns blocking light and a plurality of light transmitting patterns transmiting light are formed in the light blocking region and the light transmitting region, respectively. The line patterns and the light transmitting patterns correspond to each other in the light blocking region and the light transmitting region. The line patterns have the same line width. The light transmitting patterns have the same line width. The line transmitting pattern is a groove between the line patterns.
机译:用途:提供用于测量耀斑的掩模,以通过使用具有多个光透射图案的遮光区域和透光区域的掩模,通过执行光刻工艺来确定是否发生透镜的耀斑。构成:遮光区域和透光区域被限定在掩模基板上。在遮光区域和透光区域中分别形成有多个阻挡光的线图案和多个透射光的透光图案。线图案和透光图案在遮光区域和透光区域中彼此对应。线条图案具有相同的线条宽度。透光图案具有相同的线宽。线透射图案是线图案之间的凹槽。

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