Method for manufacturing capacitor having improved leakage current characteristic at interface between dielectric layer and upper electrode

摘要

PURPOSE: A method of forming a capacitor of a semiconductor device for improving a characteristic of a leakage current on a boundary between a dielectric layer and an upper electrode are provided to improve the characteristic of a leakage current by restraining an unstable state of the boundary between the dielectric layer and the upper electrode. CONSTITUTION: A bottom electrode is formed on a semiconductor substrate(110). At this time, an interlayer dielectric is arranged between the semiconductor substrate and the bottom electrode. A rapid thermal nitridation process is performed(120). A bugger layer is formed between the interlayer dielectric and the bottom electrode. A dielectric layer is formed on the buffer layer(130). A top electrode is formed on the bottom electrode(140). The first thermal process is performed under temperature of 200 to 250 degrees centigrade by using O2 gas or N2O gas or O3 gas(150). The second thermal process is performed under vacuum atmosphere(160).