首页> 外国专利> 3 METHOD FOR PREPARING OF FILLING CYLINDER OF HIGHLY PURE NITROGEN TRIFLUORIDENF3 BY TREATING THE INNER SIDE OF FILLING CYLINDER AND FILLING CYLINDER PREPARED BY THE METHOD

3 METHOD FOR PREPARING OF FILLING CYLINDER OF HIGHLY PURE NITROGEN TRIFLUORIDENF3 BY TREATING THE INNER SIDE OF FILLING CYLINDER AND FILLING CYLINDER PREPARED BY THE METHOD

机译:3通过处理填充缸的内侧和制备该方法制备的填充缸来制备高纯度三氟化氮的填充缸的方法

摘要

PURPOSE: A charge container manufacturing method of high purity nitrogen trifluoride by treating the inside of the charge container early and the charge container thereby are provided to use effectively for washing of semiconductors or CVD(chemical vapor deposition) apparatus or etching without purifying additionally by keeping high purity of nitrogen trifluoride. CONSTITUTION: The surface roughness of an initial charge container is formed to be less than 1 micron by manufacturing the charge container with grinding the inner surface of the charge container. The number of particles less than 0.1 micrometer in the charge container is decreased to be less than 100/ft3 by heating and vacuum-processing the charge container ten times or more at 90-150 deg.C for three hours, and moisture is reduced to be less than 1 ppm. The charge container is made of manganese steel, carbon steel, chrome molybdenum steel and light alloy. High purity nitrogen trifluoride is stored safely by processing the inside of the charge container for cleaning the semiconductor or CVD apparatus or etching.
机译:用途:一种通过对电荷容器的内部进行早期处理来制造高纯度三氟化氮的电荷容器的方法,由此提供了该电荷容器可有效地用于半导体或CVD(化学气相沉积)装置的清洗或蚀刻,而无需通过保持高纯度的三氟化氮。构成:通过研磨充电容器的内表面来制造充电容器,可以使初始充电容器的表面粗糙度小于1微米。通过在90-150℃下加热和真空处理十次或以上十次以上三小时,将装料容器中小于0.1微米的颗粒数减少至小于100 / ft3。小于1 ppm。装料箱由锰钢,碳钢,铬钼钢和轻合金制成。通过处理电荷容器的内部以清洁半导体或CVD设备或进行蚀刻,可以安全地存储高纯度三氟化氮。

著录项

  • 公开/公告号KR20030037465A

    专利类型

  • 公开/公告日2003-05-14

    原文格式PDF

  • 申请/专利权人 DAI BECK CO. LTD.;

    申请/专利号KR20010068505

  • 发明设计人 CHUN GYEONG U;

    申请日2001-11-05

  • 分类号B24B31/00;

  • 国家 KR

  • 入库时间 2022-08-21 23:47:08

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