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Belt attached low temperature CVD system and method for systhesizing carbon nanotubes using the system

机译:带式低温CVD系统和使用该系统的碳纳米管合成方法

摘要

PURPOSE: A method for producing carbon nano tube in commercial quantity is provided, which is more economical than conventional methods using quartz tube by employing a belt-type thermochemical deposition apparatus that can produce continuously carbon nano tube. CONSTITUTION: The manufacturing method of carbon nano tube comprises the steps (i) depositing a transition metal thin layer on a substrate(10) to a thickness of 20 to 50nm through thermochemical deposition or sputtering method; (ii) placing the substrate on a grate plate(1) being rotated continuously; (iii) etching the transition metal thin layer formed on the surface of the substrate to induce the growth of grains, wherein ammonia gas/hydrogen gas(80-1000sccm) is introduced to 1st reaction zone of which temperature is controlled within the temperature range of 800 to 850deg.C; (iv) introducing carbonizing gas such as acetylene gas, ethylene gas, propane gas, propane gas or methane gas to 2nd reaction zone controlled in the temperature range of 500 to 550deg.C to form carbon nano tube from the grains, wherein the carbonizing gas is fed into the 2nd reaction zone in an amount of 20 to 1000sccm.
机译:目的:提供一种商业化生产碳纳米管的方法,该方法比采用石英管的传统方法更经济,方法是采用可以连续生产碳纳米管的带式热化学沉积设备。组成:碳纳米管的制造方法包括以下步骤:(i)通过热化学沉积或溅射法在衬底(10)上沉积厚度为20至50nm的过渡金属薄层; (ii)将基板放置在连续旋转的炉排板(1)上; (iii)蚀刻形成在基板表面上的过渡金属薄层以引起晶粒的生长,其中将氨气/氢气(80-1000sccm)引入到第一反应区中,该第一反应区的温度被控制在200℃的温度范围内。 800至850°C; (iv)将乙炔气,乙烯气,丙烷气,丙烷气或甲烷气等碳化气体引入温度控制在500-550℃的第二反应区,由晶粒形成碳纳米管,其中,将其以20至1000sccm的量进料到第二反应区中。

著录项

  • 公开/公告号KR100366809B1

    专利类型

  • 公开/公告日2003-01-09

    原文格式PDF

  • 申请/专利权人

    申请/专利号KR20000014247

  • 发明设计人 이철진;유재은;

    申请日2000-03-21

  • 分类号C23C16/54;

  • 国家 KR

  • 入库时间 2022-08-21 23:45:50

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