首页>
外国专利>
Method for the formation of a siliceous coating film and a substrate material provided with a siliceous coating film
Method for the formation of a siliceous coating film and a substrate material provided with a siliceous coating film
展开▼
机译:硅质涂膜的形成方法以及具有硅质涂膜的基材
展开▼
页面导航
摘要
著录项
相似文献
摘要
Disclosed is a method for the formation of a silica coating film having a remarkably high crack-forming thickness limit on the surface of a substrate which may be highly heat resistant, for example, having a circuit wiring layer of polycrystalline silicon to withstand a temperature higher than 500° C. without excessive diffusion of dopant through the source layer or drain layer of the semiconductor device. The method comprises the steps of: coating the substrate surface with a coating solution containing a modified polysilazane which is a reaction product of a polysilazane and a dialkyl alkanol amine, drying the coating layer, subjecting the coating layer to a first baking treatment at 350-450° C. for 10-60 minutes and subjecting the layer to a second baking treatment at 550-800° C. for 0.5-60 minutes.
展开▼