首页> 外国专利> METHOD OF STORING OPTICALLY GENERATED CHARGES BY OPTICAL SIGNAL IN SOLID STATE IMAGING DEVICE

METHOD OF STORING OPTICALLY GENERATED CHARGES BY OPTICAL SIGNAL IN SOLID STATE IMAGING DEVICE

机译:在固态成像设备中通过光学信号存储光学产生的电荷的方法

摘要

Disclosed is a method of storing optically generated charges by an optical signal in a solid state imaging device, which is particularly a method of storing optically generated charges by an optical signal in a solid state imaging device using a MOS image sensor of a threshold voltage modulation type, which is used for a video camera, an electronic camera, an image input camera, a scanner, a facsimile or the like. The method comprises the steps of preparing a solid state imaging device having a unit pixel including a photo diode 111 and a MOSFET 112, the MOSFET 112 having a carrier pocket 25 for storing optically generated charges generated in the photo diode 111, the carrier pocket 25 being provided under a channel region 15c in the vicinity of a source region 16, transferring the optically generated charges to the carrier pocket 25 and then storing them therein while maintaining the channel region 15c in an accumulation state such that the optically generated charges are not affected by interface levels in the channel region 15c. IMAGE
机译:公开了一种在固态成像装置中通过光信号存储光学产生的电荷的方法,特别是一种使用阈值电压调制的MOS图像传感器在固态成像装置中通过光信号存储光学产生的电荷的方法。类型,用于摄像机,电子摄像机,图像输入摄像机,扫描仪,传真机等。该方法包括以下步骤:制备具有包括光电二极管111和MOSFET 112的单位像素的固态成像装置,MOSFET 112具有载流子袋25,用于存储在光电二极管111中产生的光学产生的电荷,载流子袋25在源极区16附近的沟道区15c下方设置有被形成的载流子,将光产生的电荷转移到载流子袋25,然后将其存储在其中,同时将沟道区15c保持在累积状态,从而不影响光产生的电荷。通道区域15c中的界面层的水平。 <图像>

著录项

  • 公开/公告号KR100377599B1

    专利类型

  • 公开/公告日2003-03-29

    原文格式PDF

  • 申请/专利权人

    申请/专利号KR20010008388

  • 发明设计人 미이다다까시;

    申请日2001-02-20

  • 分类号H04N5/335;

  • 国家 KR

  • 入库时间 2022-08-21 23:45:31

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