首页> 外国专利> Internal reference voltage generator capable of controlling value of internal reference voltage according to temperature variation and internal power supply voltage generator including the same

Internal reference voltage generator capable of controlling value of internal reference voltage according to temperature variation and internal power supply voltage generator including the same

机译:能够根据温度变化来控制内部基准电压值的内部基准电压发生器以及包括该内部基准电压发生器的内部电源电压发生器

摘要

The present invention provides a temperature-compensating reference voltage generator, including a temperature-compensating voltage divider, or variable voltage generator, for dividing an input reference voltage in order to generate a temperature-compensated output voltage. Preferably included, are a first differential amplifier for amplifying a voltage difference between a first reference voltage and a first feedback voltage in order to output an internal reference voltage, a first voltage divider for generating and outputting a first feedback voltage in response to the temperature-compensated voltage, the first voltage divider further including, two resistive elements for controlling a magnitude of reference voltage. In an embodiment of the present invention, operation of MOS transistors in a weak inversion region compensates for changes in temperature, thereby generating a temperature-independent voltage reference, and thus a temperature-independent power supply voltage, thereby reducing fluctuations in performance of semiconductor devices caused by variations in temperature.
机译:本发明提供了一种温度补偿参考电压发生器,其包括温度补偿分压器或可变电压发生器,用于对输入参考电压进行分压以产生温度补偿的输出电压。优选地包括:第一差分放大器,用于放大第一参考电压和第一反馈电压之间的电压差,以便输出内部参考电压;第一分压器,用于响应于温度而产生和输出第一反馈电压。补偿电压,第一分压器还包括两个电阻元件,用于控制参考电压的大小。在本发明的实施例中,在弱反转区域中的MOS晶体管的操作补偿温度的变化,从而产生与温度无关的电压基准,并因此产生与温度无关的电源电压,从而减小半导体器件的性能波动。由温度变化引起。

著录项

  • 公开/公告号KR100393226B1

    专利类型

  • 公开/公告日2003-07-31

    原文格式PDF

  • 申请/专利权人

    申请/专利号KR20010039760

  • 发明设计人 심재윤;

    申请日2001-07-04

  • 分类号G11C5/14;

  • 国家 KR

  • 入库时间 2022-08-21 23:45:10

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