method for minimizing change in etching rate of semiconductor wafer depending on mask pattern density

摘要

The present invention relates to a method for minimizing the etch rate change of a semiconductor wafer according to the mask pattern density to minimize the effect of the mask pattern density sikieo relationship changes the variable in a close amount of the etching gas, the area of ​​the pattern formed by the etching process etching the case that the total area value to mask pattern density divided by the layer, when the reference number of the mask pattern density is X, the amount of, the etching gas during the etching process having a Y having a small mask pattern density than that of the X X when compared with the case of going to increase as XY, and the etching process a mask pattern having a larger density than the Z X, characterized in that it proceeds by reducing ZX as compared with the amount of the etching gas in the case of X.