A method for adjusting the magnetization of the bias layer of a magneto - resistive sensor element and, accordingly, processed sensor element, and is suitable for carrying out the process sensor substrate

摘要

The invention relates to a method for regulating the magnetization of at least one bias layer of a magnetoresistive sensor element, whereby the bias layer is part of an AAF (artificial antiferromagnetic) system consisting of at least one bias layer, at least one flux conducting layer and at least one connecting layer that is arranged between said layers and connects them antiferromagnetically. The inventive method comprises the following steps: a) the sensor element is heated to above a predetermined temperature (Ts) or cooled to below a predetermined temperature (Ts), b) a magnetic regulating field (Hein) is applied during and/or after heating or cooling, c) the regulating field (Hein) is no longer applied after a predetermined time period, and d) the temperature is brought back to the initial temperature.