Process for anisotropic structuring of materials in micro- and optoelectronics and micromechanics comprises an etching process and a passivation carried out with oxygen-containing gases or oxygen-containing gas plasmas

摘要

Process for anisotropic structuring of materials in micro- and optoelectronics and micromechanics comprises etching and passivation processes in a reaction chamber of a plasma etching reactor. The passivation process is carried out with oxygen-containing gases or oxygen-containing gas plasmas. Preferred Features: The passivation step is carried out at a pressure of 0.1-100 Pa, a flow rate of 5-50 sccm, and a high frequency power density of 0.01-2 W/cm2 for 1-100 seconds.