首页> 外国专利> Parameter determining method e.g. for titanium deposition rate, involves comparing experimental verification result of substrate hole edge covering titanium layers, with table of simulated parameters for hole

Parameter determining method e.g. for titanium deposition rate, involves comparing experimental verification result of substrate hole edge covering titanium layers, with table of simulated parameters for hole

机译:参数确定方法,例如对于钛的沉积速率,涉及将覆盖钛层的基材孔边缘的实验验证结果与孔的模拟参数表进行比较

摘要

The metal atoms and ions in the argon plasma are transported on a substrate (2). The coverage of the edge of the substrate hole with titanium layers (1a,1b), is verified experimentally by imaging the titanium layers. The result of the verification is compared with the compiled variant tables of relevant simulated deposition parameters for the substrate hole.
机译:氩等离子体中的金属原子和离子在衬底(2)上传输。通过对钛层进行成像实验验证了钛层(1a,1b)对基板孔边缘的覆盖率。将验证结果与基材孔的相关模拟沉积参数的已编译变量表进行比较。

著录项

  • 公开/公告号DE10136854A1

    专利类型

  • 公开/公告日2003-02-20

    原文格式PDF

  • 申请/专利权人 INFINEON TECHNOLOGIES AG;

    申请/专利号DE2001136854

  • 发明设计人 RUF ALEXANDER;KERSCH ALFRED;

    申请日2001-07-27

  • 分类号C23C14/54;

  • 国家 DE

  • 入库时间 2022-08-21 23:42:45

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