Field effect transistors formation includes forming depression in channel region below surrounding regions of semiconductor substrate

摘要

A depression is produced into the channel region (2-3) of the semiconductor substrate (2-0). This lies below surrounding regions of the substrate. A gate insulator (2-24) is produced on the surface of the channel region and a gate electrode (2-26) is then deposited upon it. In immediately surrounding regions of the substrate, diffused regions are produced to form the source (2-52) and drain (2-53).