首页> 外国专利> New poly-o-hydroxyamides, used for producing polybenzoxazoles e.g. dielectric of electronic device, has di(2-hydroxyphenyl)alkane-1,1'-diyl and diphenylalkane-1,1'-diyl groups in chain and unsaturated acyl end-cap groups

New poly-o-hydroxyamides, used for producing polybenzoxazoles e.g. dielectric of electronic device, has di(2-hydroxyphenyl)alkane-1,1'-diyl and diphenylalkane-1,1'-diyl groups in chain and unsaturated acyl end-cap groups

机译:用于生产聚苯并恶唑的新的聚邻羟基酰胺,例如电子设备的电介质,在链中具有二(2-羟苯基)烷烃-1,1'-二基和二苯基烷烃-1,1'-二基和不饱和酰基封端基团

摘要

New poly-o-hydroxyamides (I) have di(2-hydroxyphenyl)alkane-1,1'-diyl and diphenylalkane-1,1'-diyl groups in the polyamide chain and unsaturated acyl end-cap groups. Poly-o-hydroxyamides of formula (I), with di(2-hydroxyphenyl)alkane-1,1'-diyl and diphenylalkane-1,1'-diyl groups in the polyamide chain and unsaturated acyl end-cap groups, are new: Q = asterisk -NH-Ar1-NH-CO-Ar2-CO-; Z = asterisk -NH-Ar1-NH-CO-Y1-CO- asterisk ; A = asterisk -NH-Ar1-NH-CO-Y2-CO- asterisk ; T = asterisk -NH-Ar1-NH- asterisk ; Ar1 = a di(2-hydroxyphenyl)alkane-1,1'-diyl group of formula (i); Ar2 = a diphenylalkane-1,1'-diyl group of formula (ii); X = an unsaturated acyl group; R1, R2 = H or a substituent; Y1, Y2 = divalent groups; n, m = 1-100; p = 0-50. . The full definitions are given in the DEFINITIONS (Full Definitions) Field. Independent claims are also included for the following: (1) Polybenzoxazoles of formula (II): (where Q', Z', A', T' = cyclized benzoxazole groups corresponding to Q, Z, A, T); (2) Production of (I) by reacting a bisaminophenol of the formula H2N-Ar1-NH2 with an activated dicarboxylic acid derivative of the formula L-CO-Y1-CO-L (where L is an activating group); (3) Production of (II) by heating (I); (4) Electronic devices comprising a dielectric containing (II); (5) Production of the electronic device by coating a substrate with a solution of (I), evaporating the solvent and cyclization to (II) by heating, structurization to form a resist structure with trenches, depositing conducting material on the resist so that it filled the trenches and removing excess material; (6) Production of an electronic device by applying a solution of (I) to a substrate trenches between metal structures on its surface and evaporating the solvent so that the trenches are filled with (I), then heating the substrate to cyclize (I).
机译:新的聚-邻-羟基酰胺(I)在聚酰胺链中具有二(2-羟苯基)链烷-1,1'-二基和二苯基链烷-1,1'-二基和不饱和酰基封端基团。式(I)的聚邻羟基酰胺是新的,其在聚酰胺链中具有二(2-羟基苯基)烷烃-1,1'-二基和二苯基烷烃-1,1'-二基,并且具有不饱和的酰基封端基团:Q =星号-NH-Ar 1 -NH-CO-Ar 2 -CO-; Z =星号-NH-Ar <1> -NH-CO-Y <1> -CO-星号; A =星号-NH-Ar 1 -NH-CO-Y 2 -CO-星号; T =星号-NH-Ar <1> -NH-星号; Ar 1 =式(i)的二(2-羟基苯基)链烷-1,1′-二基; Ar 2 =式(ii)的二苯基烷烃-1,1′-二基; X =不饱和酰基; R 1,R 2 = H或取代基。 Y 1,Y 2 =二价基团; n,m = 1-100; p = 0-50。 。完整定义在“定义(完整定义)”字段中给出。 (1)式(II)的聚苯并恶唑:(其中Q′,Z′,A′,T′=对应于Q,Z,A,T的环化苯并恶唑基团); (2)通过使式H 2 N-Ar 1 -NH 2的双氨基酚与式L-CO-Y 1 -CO-L的活化的二羧酸衍生物(其中L是活化的组); (3)通过加热(I)生产(II); (4)电子设备,其包含含有(II)的电介质; (5)通过用(I)的溶液涂覆基板,蒸发溶剂并通过加热将其环化为(II)以形成具有沟槽的抗蚀剂结构,在该抗蚀剂上沉积导电材料以使其导电的方法来制造电子器件。填满沟槽并清除多余的材料; (6)通过将(I)的溶液施加到其表面上的金属结构之间的衬底沟槽上并蒸发溶剂以使沟槽填充有(I),然后加热衬底以使其环化(I)来制造电子设备。 。

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