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Production of chloromethylsilane compounds involves liquid phase photochlorination of corresponding methylsilane compound with substoichiometric amount of chlorine in presence of hydrogen chloride
Production of chloromethylsilane compounds involves liquid phase photochlorination of corresponding methylsilane compound with substoichiometric amount of chlorine in presence of hydrogen chloride
Production of silanes (I) with 1-4 mono-, di- or tri-chloromethyl groups comprises reacting methylsilanes (II) with a substoichiometric amount of chlorine in the presence of = 0.1 wt.% hydrogen chloride with respect to (II) under electromagnetic radiation inducing chlorination and at temperatures below the boiling point of (II). Production of silanes of formula (ClCH(3-y))a(CH3)bSiCl(4-a-b) (I) comprises reacting methylsilanes of formula (CH3)(a+b)SiCl(4-a-b) (II) with a substoichiometric amount of chlorine in the presence of = 0.1 wt.% hydrogen chloride with respect to (II) under electromagnetic radiation inducing chlorination and at temperatures below the boiling point of (II): y = 1, 2 or 3; a = 1, 2, 3 or 4' b = 0, 1, 2 or 3; a+b = 1, 2, 3 or 4 An Independent claim is included for equipment for the production of silanes containing chloromethyl groups under electromagnetic radiation inducing chlorination, in which a tubular medium pressure mercury radiation source with a quartz protective tube and a covering tube of borosilicate glass is placed concentrically in a metallic outer tube, the educts and HCl flow upwards and flooded operation is used.
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机译:具有1-4个一,二,三或三氯甲基的硅烷(I)的生产包括使甲基硅烷(II)与亚化学计量的氯在相对于(II)≥0.1重量%的氯化氢存在下反应在电磁辐射下引发氯化作用,并且温度低于(II)的沸点。式(ClCH(3-y))a(CH3)bSiCl(4-ab)(I)的硅烷的生产包括将式(CH3)(a + b)SiCl(4-ab)(II)的甲基硅烷与相对于(II),在电磁辐射诱导氯化作用下,在低于(II)沸点的温度下,相对于(II),在> 0.1wt。%的氯化氢存在下,氯的亚化学计量的量:y = 1、2或3; a = 1、2、3或4'b = 0、1、2或3; a + b = 1、2、3或4涉及在电磁辐射诱导氯化作用下生产含有氯甲基基团的硅烷的设备的独立权利要求,其中管状中压汞辐射源带有石英保护管和覆盖管将一部分硼硅酸盐玻璃同心放置在金属外管中,离析物和HCl向上流动,并使用溢流操作。
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