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process for conversion of laser radiation in x-rays, particularly euv radiation by means of a the laser produced plasma

机译:借助激光产生的等离子体将x射线中的激光辐射(特别是euv辐射)转换的方法

摘要

Broadband light sources in the extreme ultraviolet (EUV) and weak X-ray range can be realized by the interaction of pulsed lasers with matter. Radiation-emitting plasmas are produced when laser pulses impact with a sufficient amount of intensity against solid, liquid or gaseous materials. In order to realize emissions in the hard X-ray range, lasers must be used which have high peak intensities, that is, they have pulse durations of less than one nanosecond. The aim of the invention is to increase the efficiency of the conversion of laser radiation into X-radiation, in particular, into EUV radiation. To this end, the invention provides that amplitude-modulated or phase-modulated sub-nanosecond pulses are irradiated onto the solid, liquid or gaseous material in order to generate a plasma having a high radiation conversion efficiency. The pulse modulation ensues according to the intensity of the X-radiation emitted by the plasma. The invention is used, for example, in electron-beam lithography for producing microelectronic semiconductor components.
机译:通过脉冲激光与物质的相互作用,可以实现极紫外(EUV)和弱X射线范围的宽带光源。当激光脉冲以足够的强度撞击固态,液态或气态材料时,就会产生发射辐射的等离子体。为了实现在硬X射线范围内的发射,必须使用具有高峰值强度的激光,也就是说,它们的脉冲持续时间小于一纳秒。发明内容本发明的目的是提高将激光辐射转换为X辐射,特别是EUV辐射的效率。为此,本发明提供了将振幅调制或相位调制的亚纳秒脉冲辐射到固体,液体或气体材料上,以产生具有高辐射转换效率的等离子体。根据等离子体发射的X射线的强度来进行脉冲调制。本发明例如用于电子束光刻中以生产微电子半导体部件。

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