The narrowband filter has 4 silicon wafers (1,2,3,4) located in respective planes, structured via a volume micromechanical method, for providing a mirror holder (5) and a movable mirror (7) supported by flexure springs, the resonator gap provided by a dielectric layer stack (12) between the movable mirror and a fixed mirror (9). The electrode gap between the drive electrodes (10) is greater than the resonator gap, the inside surfaces of the wafers provided with the drive electrodes having polysilicon and silicondioxide dielectric mirrors, their outside surfaces having anti-reflection layers (15).
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