Half conductor assembly, which a solid - image sensor with suppressed change in the interference of the connection points concentration distribution in a semiconductor substrate, and method for the production thereof

摘要

Photo lithography is used to test a photoresist (30) to form an orifice through an end region of a gate structure (15) and over a range of the gate structure (15) is adjacent to, where a photodiode (18) is to form. Then, by use of the photoresist (30) is used as implantation mask a vertically implantation of n - conductive impurities (31), such as, for example, phosphorus, with an energy of from 300 to 600 kev and a dose of 1e12 to 1e14 ions / cm · 2 · is carried out, so that, as a result, a n - conductive impurity region (17) in an upper surface of a p - trough (11) is formed. In this case, the n - conductive impurities (31) the gate structure (15) and the p - trough (11), so that in this way, the n - conductive impurity region (17) also under the gate structure (15) can be formed.