Isolation methods for active zones of a semiconductor substrate with shallow planarized trench

摘要

The device a semi - conductor comprises, in a semi - conductive substrate (1) at least one predetermined region of the substrate (6) intended to subsequently form an active zone, open at its upper surface and is situated between the lateral trenches (7) containing an insulating material comprising at least one layer of a so-called in accordance with the insulating material forming, on either side of said predetermined region of the substrate of the invention, a boss (16) on the plane upper surface of the device. The height of the bump is less than 1000 a and the insulating material may also comprise the planarising oxide.