首页> 外国专利> METHOD OF LOCALIZED ORGANIC GRAFTING WITHOUT MASK ON CONDUCTIVE OR SEMICONDUCTOR PROPERTIES OF COMPOSITE SURFACES

METHOD OF LOCALIZED ORGANIC GRAFTING WITHOUT MASK ON CONDUCTIVE OR SEMICONDUCTOR PROPERTIES OF COMPOSITE SURFACES

机译:无掩膜的局部有机接枝方法,不影响复合表面的导电或半导电性能

摘要

A process for mask-free localized grafting of organic molecules capable of being electrically activated, onto a composite surface comprising conductive and/or semiconductive portions, by placing said organic molecules in contact with said composite surface, in which said grafting is performed electrochemically in a single step on chosen, defined areas of said conductive and/or semiconductive portions, said areas being brought to a potential higher than or equal to a threshold electrical potential determined relative to a reference electrode, said threshold electrical potential being the potential above which grafting of said organic molecules takes place.
机译:通过将所述有机分子与所述复合材料表面接触,将能够被电活化的有机分子无掩模局部接枝到包含导电和/或半导电部分的复合材料表面上的方法,其中所述接枝是在有机硅中电化学进行的。在所述导电和/或半导电部分的选定的限定区域上的单个步骤,使所述区域的电势高于或等于相对于参考电极确定的阈值电势,所述阈值电势是高于其的接枝电势。所述有机分子发生。

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